Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: transistorDescription:218510+$0.953150+$0.9037100+$0.8684300+$0.8472500+$0.82601000+$0.80482500+$0.77315000+$0.7660 -
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Category: transistorDescription: Trans RF MOSFET N-CH 65V 3Pin NI-780 T/R50811+$573.977710+$559.004350+$547.5248100+$543.5319200+$540.5372500+$536.54431000+$534.04882000+$531.5532 -
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Category: transistorDescription: SOT-143B N-CH 10V 0.05A336710+$6.8700100+$6.5265500+$6.29751000+$6.28612000+$6.24035000+$6.18307500+$6.137210000+$6.1143 -
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Category: transistorDescription: Transistor: PNP; bipolar; 65V; 100mA; SOT23,TO236AB181520+$0.195850+$0.1813100+$0.1740300+$0.1682500+$0.16391000+$0.16105000+$0.158110000+$0.1552 -
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Category: transistorDescription: Transistor: NPN; bipolar; 80V; 1A; 640mW; SOT22388255+$1.540425+$1.426350+$1.3464100+$1.3122500+$1.28932500+$1.26085000+$1.249410000+$1.2323 -
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Category: transistorDescription: Transistor: PNP; bipolar; 45V; 500mA; SOT23980120+$0.342950+$0.3175100+$0.3048300+$0.2946500+$0.28701000+$0.28195000+$0.276910000+$0.2718 -
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Category: transistorDescription: NTrenchMOS transistor with channel enhancement mode N-channel enhancement mode TrenchMOS transistor3904 -
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Category: transistorDescription: RF Power Transistor,1805 to 1995MHz, 129W, Typ Gain in dB is 19.9 @ 1880MHz, 28V, LDMOS, SOT178564701+$1239.213810+$1227.948225+$1222.315450+$1216.6826100+$1211.0499150+$1205.4171250+$1199.7843500+$1194.1515 -
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Category: transistorDescription: Trans FET N-CH 150V GaN HEMT 3Pin SOT-467C Bulk17681+$1275.294910+$1263.701325+$1257.904550+$1252.1077100+$1246.3109150+$1240.5141250+$1234.7173500+$1228.9205 -
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Category: transistorDescription:65951+$3210.215810+$3181.032025+$3166.440150+$3151.8482100+$3137.2564150+$3122.6645250+$3108.0726500+$3093.4807 -
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Category: transistorDescription: PNPSurface mount device (SMD) plastic packaging for medium power transistor series. PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.8490 -
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Category: transistorDescription: TRANSISTOR 100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SST3, SMD, 3 PIN, BIP General Purpose Small Signal3779 -
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Category: transistorDescription: Trans RF MOSFET N-CH 65V 5Pin SOT-539A Bulk69541+$1324.426410+$1312.386225+$1306.366050+$1300.3459100+$1294.3258150+$1288.3057250+$1282.2856500+$1276.2654 -
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Category: transistorDescription: 40 V PNPLow VCEsat (BISS) transistor 40 V PNP low VCEsat (BISS) transistor516510+$1.181350+$1.1200100+$1.0763300+$1.0500500+$1.02381000+$0.99752500+$0.95815000+$0.9494 -
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Category: transistorDescription: NPN Transistors, NXP series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, NXP Semiconductors88715+$1.821225+$1.686350+$1.5918100+$1.5514500+$1.52442500+$1.49065000+$1.477210000+$1.4569 -
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Category: transistorDescription: RF FET transistor, 40 VDC, 31 W, 136 MHz, 520 MHz, TO-27039721+$82.720710+$79.1241100+$78.4767250+$77.9732500+$77.18201000+$76.82232500+$76.31885000+$75.8872 -
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Category: transistorDescription: RF Power Transistor,470 to 1215MHz, 90W, Typ Gain in dB is 22 @ 860MHz, 50V, LDMOS, SOT173612611+$881.351110+$850.426550+$846.5609100+$842.6954150+$836.5104250+$831.0986500+$825.68681000+$819.5019 -
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Category: transistorDescription: N-channel TrenchMOS intermediate level FET113410+$8.5752100+$8.1464500+$7.86061000+$7.84632000+$7.78915000+$7.71777500+$7.660510000+$7.6319
